Schottky-Barrier height lowering by an increase of the substrate doping in PtSi Schottky barrier source/drain FETs

摘要

In this letter, the Schottky-barrier height (SBH) lowering in Pt silicide/n-Si junctions and its implications to Schottky-barrier source/drain p-field-effect transistors (p-SBFETs) are studied experimentally and numerically. We demonstrate that the increase of the n-Si substrate doping is responsible for a larger hole SBH lowering through an image-force mechanism, which leads to a substantial gain of the drive current in the long-channel bulk p-SBFETs. Numerical simulations. show that the channel doping concentration is also critical for short-channel p/n-silicon-on-insulator SBFET performance.